Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs

Abstract

A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.