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Optical, photoelectric, and photorefractive properties of Ti-doped CdTe crystals
19
Citations
20
References
2003
Year
Optical MaterialsEngineeringTi CrystalsOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorOptical PropertiesTi-doped Cdte CrystalsMaterials SciencePhotoluminescenceCrystalline DefectsOptoelectronic MaterialsSemiconductor MaterialPhotoelectric MeasurementOptical CeramicPhotorefractive CharacteristicsApplied PhysicsExcited Impurity T14OptoelectronicsSolar Cell Materials
The photorefractive characteristics of Ti-doped CdTe semi-insulating crystals were measured. Additional optical and photoelectric measurement confirmed that titanium has advantages over other dopants and that this material has better characteristics for potential applications. The high optical holographic gain coefficient, Γ≈0.60 cm−1, low background absorption, kb≈0.2 cm−1, high optical quality and homogeneity, and almost monopolar (electronic) photoconductivity show that these materials can be effectively used for both optical and photoelectric applications in the near infrared region. Studies of the optical absorption and photodiffusion current made it possible to determine the nature and energy structure of impurity and intrinsic defects as well as to establish their role in the photorefractive effect. It is shown that the excited impurity T14(F) state is in resonance with the conduction band. As a result, autoionization of electrons to the conduction band under laser excitation takes place. An energy-level diagram, both of impurity and intrinsic defects, in the CdTe:Ti crystals was constructed.
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