Impurity-band density of states in heavily doped semiconductors: Numerical results

Abstract

The "band-tail" density of states $\ensuremath{\rho}(E)$ available to electrons in a field of randomly distributed, attractive impurities developed in previous work is extended to higher energy $E$. Numerical values of $\ensuremath{\rho}(E)$ are also presented (1) for comparison with $\ensuremath{\rho}(E)$ developed by other methods and (2) for calculation of optical and other properties of heavily doped semiconductors depending on $\ensuremath{\rho}(E)$.