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Low-bias, high-temperature operation of an InAs–InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7μm

PhotonicsQuantum ScienceElectronic DevicesElectrical EngineeringQuantum PhotonicsPhotodetectorsInas–ingaas Quantum-dotEngineeringInfrared SensorQuantum DeviceApplied PhysicsHigh-temperature OperationPeak-detection WavelengthOptoelectronic DevicesQuantum Photonic DeviceOptoelectronicsCompound Semiconductor