Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

Abstract

ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> and forward current density as high as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are reported. Results of the integration with NiO based switching memory elements are also shown.