Publication | Closed Access
Formation of Self Trapped Excitons and F Centers in Picosecond Range in KI Crystals
31
Citations
14
References
1977
Year
Localized Excited StateEngineeringLaser ScienceLaser ApplicationsExcitation Energy TransferElectronic Excited StateHigh-power LasersPolariton DynamicOptical PropertiesF CentersQuantum MaterialsOptical PumpingPhotonicsPhysicsRelativistic Laser-matter InteractionAtomic PhysicsCrystallographySolid-state PhysicKi CrystalsRoom TemperatureApplied PhysicsCondensed Matter PhysicsSelf Trapped Excitons
By using a mode locked ruby laser, it has been shown that the self trapped excitons in KI crystals are created with a time constant of 210±15 psec at liquid helium temperature, and F centers are created with a time constant of 11±9 psec at room temperature, respectively. An additional absorption band growing with a time constant of 75±25 psec at liquid helium temperature and of 10±10 psec at room temperature was observed around 694 nm. This absorption band is bleached with a decay time of about 10 psec at both temperatures, but its origin was not clear. Formation processes of the self trapped excitons and of the F centers are discussed.
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