High-Temperature Dielectric Response and Multiscale Mechanism of SiO ₂ /Si ₃ N ₄ Nanocomposites

Abstract

The high-temperature dielectric properties of SiO2/Si3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.