Scaling behavior in amorphous and disordered metals

Abstract

We show that the low-temperature resistivity of amorphous and disordered metals is described by a square-root variation with temperature, as suggested by various scaling theories of the metal-insulator transition. The coefficient $\ensuremath{\Delta}$ (the correlation gap) has the identical dependence on resistivity, $\ensuremath{\Delta}\ensuremath{\sim}{\ensuremath{\rho}}^{\ensuremath{-}2}$, reported for materials with resistivity up to three orders of magnitude greater.