Publication | Closed Access
The Poole-Frenkel Effect with Compensation Present
428
Citations
21
References
1968
Year
SemiconductorsEmission SiteElectrical EngineeringSemiconductor TechnologyEngineeringPhysicsIntrinsic ImpurityApplied PhysicsCondensed Matter PhysicsTreatment EffectRemuneration PracticeSemiconductor MaterialRehabilitationCompensation PresentPoole-frenkel ModelSemiconductor DeviceBand Edge
This extended Poole-Frenkel model includes the effects of compensation. The relative densities of donor and acceptor sites control the slope of the log J vs E1/2 plots. With only one type of site present, the slope equals that expected for Schottky emission [slope= (e3/πεε0)1/2/2kT]. When sites of the opposite type compensate, the slope doubles. The degree of compensation must be known to determine the barrier heights separating the emission site from the band edge. Data from metal-silicon nitride-metal devices are consistent with this model with emission occurring from impurity sites approximately 2.0 eV from the conduction band edge.
| Year | Citations | |
|---|---|---|
Page 1
Page 1