Hydrogen treatment effect on shallow and deep centers in GaSb

Abstract

It is shown by spreading resistance and capacitance–voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb. Deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures. Effective diffusion coefficients for hydrogen were determined for both n+ and p+ GaSb; in the former case the diffusion is thermally activated with the relationship DH=3.4×10−5e−0.55 eV/kT, whereas in p+ material DH=1.5×10−6e−0.45 eV/kT over the temperature range 100–250 °C. Reactivation of passivated shallow and deep levels occurs for temperatures of 250–300 °C.