Damage and lattice location studies in high-temperature ion-implanted diamond

Abstract

The results of implantation of various ions (Li,C,P,Ge, and Sb) into heated diamond (∼1000 °C) are studied by channeling techniques. The residual damage and the locations in the lattice, which the implants occupy, are determined. It is shown that by implanting into heated diamond (i) graphitization can be avoided and (ii) an appreciable fraction of Li ions can be driven into interstitial sites where they are expected to be electrically active donors.