Applied Physics Letters · 2013 · 26 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsThin FilmsOxide SemiconductorsThermal Properties Of MaterialsThermal Properties Of SemiconductorsThermoelectric MaterialsThin Film Electrical PropertiesThin Film Thermal PropertiesAnisotropyCrystallographic AnisotropyCubic AnisotropyPulsed Laser DepositionSeebeck CoefficientSeebeck EffectThermoelectric PropertiesThin Film Thermoelectrics
SrTi1−xNbxO3 films with cubic structure were grown on LaAlO3 single crystal substrates by pulsed laser deposition, in which the inclination angle of the (001) plane orientation was in strict accordance with 10° against the film surface. The maximal peak value of transverse thermoelectric voltage of up to 6.88 V was obtained for the sample with the optimum thickness around 500 nm. The large voltage signals indicate SrTi1−xNbxO3 films have considerable anisotropy of the Seebeck coefficient ΔS which reaches to ∼25 μV/K. The results demonstrate cubic structure materials also can be used to develop large transverse thermoelectric voltage effect.
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