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The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringElectronic EngineeringBias Temperature InstabilityTime-dependent Dielectric BreakdownMobile CarriersDevice BreakdownPinch-off RegionMicroelectronicsElectrical Insulation