Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)

Abstract

Silver nanocrystals have been grown on Xe buffer layers at 50 K. These 3D nanocrystals are delivered to $\mathrm{Si}(111)\ensuremath{-}(7\ifmmode\times\else\texttimes\fi{}7)$ surfaces when the Xe layer is desorbed, but the density observed on the surface depends strongly on the buffer layer thickness. This dependence reflects an unusual desorption-assisted coalescence process. The results suggest that buffer-layer-assisted growth can be used to prepare nanocrystals of different sizes for a wide variety of materials and substrates.