TE/TM mode selective channel waveguides in GaAs/AlAs superlattice fabricated by SiO2 cap disordering

Abstract

Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption edge of the as-grown SL. By observing the near-field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.