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Electrical conduction mechanism in a-Se<sub>80-x</sub>Te<sub>x</sub>Ga<sub>20</sub>films (0<or=x<or=20)
39
Citations
23
References
1995
Year
Electrical Conduction MechanismEngineeringThin Film Process TechnologySemiconductorsIi-vi SemiconductorDark ConductivitySuperconductivityCharge Carrier TransportElectrical EngineeringPhysicsSemiconductor MaterialPhotoelectric MeasurementElectrical PropertyTail StatesApplied PhysicsCondensed Matter PhysicsThin FilmsOptoelectronicsElectrical Insulation
The dark conductivity and transient photoconductivity measurements on thin films of a-Se80-xTexGa20 (0<or=x<or=20) have been reported in the temperature range from 148 to 318 K. The results indicate that, at higher temperatures, hopping conduction takes place in the tail states. At lower temperatures the conduction is due to variable-range hopping, which is in fair agreement with the Mott condition of variable-range hopping. The transient photoconductivity measurements show non-exponential decay, and recombination in these glasses may be considered to take place through the valence and conduction bands.
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