Publication | Closed Access
Defect‐Driven Interfacial Electronic Structures at an Organic/Metal‐Oxide Semiconductor Heterojunction
49
Citations
83
References
2014
Year
EngineeringOrganic ElectronicsChemistrySemiconductorsCompound SemiconductorOxide HeterostructuresMaterials ScienceOrganic SemiconductorPhysical ChemistryQuantum ChemistryOrganic Charge-transfer CompoundElectronic MaterialsSurface DefectsOrganic/metal‐oxide Semiconductor HeterojunctionNatural SciencesApplied PhysicsHybrid InterfaceLarge Interface DipoleOrganic-inorganic Hybrid Material
The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.
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