Soviet Journal of Quantum Electronics · 1992 · 242 citations · 3 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials PhysicsOptical MaterialsOptoelectronicsLaser DiodesLaser Host MaterialsLaser PhysicsLuminescent MaterialsOptoelectronic MaterialsRare-earth-doped MaterialsCzochralski Crystal GrowthCzochralski GrowthDifferential EfficiencyLanthanide-doped MaterialsLaser MaterialsLasersRare-earth-doped CrystalsRare-earth-doped Host Materials
Single‑crystal Nd:GdVO4 was grown by the Czochralski method and its absorption and luminescence spectra were measured. Nd:GdVO4 shows >70 cm⁻¹ absorption at 0.8 µm, a 90 µs Nd³⁺ lifetime, lasing on 4F3/2→4I13/2 and 4I11/2 transitions, and a 54 % differential efficiency at 1.06 µm.
Single crystals of gadolinium vanadate doped with neodymium ions have been grown by the Czochralski method. The absorption and luminescence spectra of the neodymium have been measured. The absorption near 0.8 μm is higher than 70 cm−1. The lifetime of the neodymium ions is 90 μs. Laser action has been achieved on the transitions 4F3/2 → 4I13/2, 4I11/2. The differential efficiency of the lasing near 1.06 μm is 54%.
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