Concepedia

Crystallization behaviors of Zn<sub>x</sub>Sb<sub>100−x</sub> thin films for ultralong data retention phase change memory applications

Yimin Chen, Guoxiang Wang, Xiang Shen, Tiefeng Xu, Rongping Wang, Liangcai Wu, Yegang Lü, Junjian Li, Shixun Dai, Qiuhua Nie

CrystEngComm · 2013 · 66 citations · 20 references

DOI

Concepts

Abstract

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

References

20

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Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

L. Krusin‐Elbaum, C. Cabral, Kuan‐Neng Chen et al. · Applied Physics Letters · 2007 · 121 citations

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