Publication | Closed Access
Crystallization behaviors of Zn<sub>x</sub>Sb<sub>100−x</sub> thin films for ultralong data retention phase change memory applications
66
Citations
20
References
2013
Year
EngineeringLower Melting TemperatureCrystal Growth TechnologyEmerging Memory TechnologySolid-state ChemistryPhase Change Memory~201 °CIi-vi SemiconductorMaterials ScienceMaterials EngineeringCrystal MaterialCrystallographyMaterial AnalysisHigh Temperature MaterialsApplied PhysicsCondensed Matter PhysicsCrystallization BehaviorsSemiconductor MemoryThin FilmsZnsb Films
ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).
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