The Energy Levels of Zn and Se in (Al_xGa_1-x)_0.52In_0.48P

Abstract

The energy levels of Zn and Se impurities in (Al x Ga 1- x ) 0.52 In 0.48 P were investigated by temperature dependent Hall measurement. The activation energy of Zn acceptor increases monotonically with increasing AlInP mole fraction x , from 25 meV at x =0 to 97 meV at x =0.75. The activation energy of Se donor begins to increase at x =0.2–0.3, and it reaches a maximum value of about 95 meV around x =0.4. As x increases from 0.5 to 1, the energy level tends to decrease to 72 meV. This compositional dependence of the energy levels in p-type and n-type materials is similar to those in AlGaAs.