GaN MOSFET with liquid phase deposited oxide gate

Abstract

Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 µm source-to-drain distance and gate metal of 8×40 µm2, a transconductance of 48 mS/mm and a drain current of 250 mA/mm at Vgs=4 V and Vds=20 V can be achieved.