Cathodoluminescence and Electron Beam Irradiation Effect of Porous Silicon Studied by Transmission Electron Microscopy

Abstract

Cathodoluminescence (CL) from n-type porous silicon was studied using the CL detection system combined with a transmission electron microscope. Two luminescence bands were observed with peaks at 420 nm and 660 nm. The 660 nm band peak decays more quickly with increasing accelerating voltage and decreasing temperature. The intensity profile along the cross-sectional trace shows that the 660 nm luminescence centers are mainly located near the top side of the porous layer. The 420 nm CL band was found at accelerating voltage higher than 160 kV at 20 K.