Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment - Concepedia

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Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

19

Citations

18

References

2005

Year

Yow-Jon Lin, Wen-Xiang Lin, Ching-Ting Lee, Feng-Tso Chien

Solid State Communications

Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineeringSurface ScienceApplied PhysicsGan Power DeviceN-type GanSurface Recombination VelocityElectrical PropertiesOptoelectronicsCategoryiii-v Semiconductor

References

	Year	Citations

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