One-dimensional electron localisation and conduction of electron-electron scattering in narrow silicon MOSFETS

Abstract

Measurements of the conductivity of narrow ( approximately=1 mu m) silicon MOSFETs at temperatures below 1K, where one-dimensional electron localisation becomes more than a small perturbation, indicate that localisation lengths cease to be greater than the inelastic diffusion length. The authors find that conductivity in this regime depends linearly on the inelastic scattering rate, in agreement with both direct calculations and scaling methods; and they present magnetoconductivity and electron heating measurements which indicate enhancement of interaction effects and suppression of electron-phonon scattering.