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Spin- and angle-resolved photoemission study of (110) Fe films grown on GaAs by molecular beam epitaxy
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References
1985
Year
EngineeringMagnetic ResonanceMagnetoresistanceSemiconductorsAngle-resolved Photoemission StudyElectron SpectroscopyQuantum MaterialsMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorPhysicsPhotoelectric MeasurementSynchrotron RadiationSpintronicsFerromagnetismSingle-crystal FeFilm ThicknessNatural SciencesApplied PhysicsCondensed Matter PhysicsThin FilmsFe Films
Single-crystal Fe(110) films grown on GaAs by molecular beam epitaxy have been studied utilizing synchrotron radiation to obtain the first spin- and angle-resolved photoemission data from the (110) face of α-Fe. The data locates the Γ↑12 at 1.0 eV, Γ↑25′ at 2.6 eV, and Γ↓25′ at 0.6 eV below the Fermi level, in excellent agreement with recent minimum energy self-consistent band theory calculations. The variation of the magnetization with film thickness is seen to be reflected in changes in the photoemitted electron spectra for films less than 100 Å thick.
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