Study of VBL punch-through thresholds by pulse in-plane fields

Abstract

An experimental technique using pulse in-plane fields has been used to study Vertical Bloch Line (VBL) dynamics. Typically a 4 Oe, 1 μs pulse was applied parallel to a confined stripe domain and the presence of VBL were detected by the orthogonal wall motion caused by gyrotropic coupling. This method was used to study Bloch line mobility, coercivity, saturation velocity and the process of punch-through as proposed in a VBL memory device.