Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices

Abstract

Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material.