Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

Abstract

Straight and well-aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst- and template- independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c-axis. The Figure shows a cross-sectional SEM image of the GaN nanorods.