Observation of intermixing at the buried CdS/Cu(In, Ga)Se2 thin film solar cell heterojunction

Abstract

A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general.