Applied Physics Letters · 2004 · 467 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsColor RenderingColor TemperatureLight SourcesLight-emitting DiodesLuminescent MaterialsRare-earth-doped MaterialsBlue Light EmissionColor Rendering QualityDecay TimeEnergy TransferPhosphor MaterialsPhosphorescent MaterialsUltraviolet Light-emitting DiodesWhite Light-emitting Diodes
White-light-emitting diodes are fabricated by using 375nm emitting InGaN chip with Sr3MgSi2O8:Eu2+ (blue and yellow) or Sr3MgSi2O8:Eu2+, Mn2+ (blue, yellow, and red). At a color temperature of 5892K, the color coordinates are x=0.32, y=0.33, and the color rendering index is 84%; at a color temperature of 4494K, the color coordinates are x=0.35, y=0.33, and the color rendering index is 92%. The blue (470nm) and yellow (570nm) emission bands are originated from Eu2+ ions, while the red (680) emission band is originated from Mn2+ ions in Sr3MgSi2O8 host. The energy transfer among three bands occurs due to the spectral overlap between emission and absorption bands. It is confirmed by the faster decay time of the energy donor. Our white-light-emitting diodes show higher color reproducibility, higher color stability on forward-bias current, and excellent color rendering index in comparison with a commercial YAG:Ce3+-based white-light-emitting diode.
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n-UV+Blue/Green/Red White Light Emitting Diode Lamps
C. H. Kuo, Jinn‐Kong Sheu, Shoou‐Jinn Chang et al. · Japanese Journal of Applied Physics · 2003 · 95 citations
Jong Su Kim, Ji Young Kang, Pyung Eun Jeon et al. · Japanese Journal of Applied Physics · 2004 · 68 citations