High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Abstract

High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.