Fabrication AlGaN/GaN MIS UV Photodetector by H<sub>2</sub>O<sub>2</sub> Oxidation

Abstract

This letter demonstrates and investigates AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> oxidation technique is adopted to grow an insulator layer. The material qualitative and semiquantitative analyses of the H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -grown aluminum oxide are studied by energy dispersive X-ray spectroscopy The performances of the present MIS-UV-PD with different H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> treatment time are also investigated. The MIS-PD with 5-min H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> treatment time has the optimum performances. The dark current is suppressed from 4.23 nA to 5.15 pA at -10 V. The responsivity and the UV to visible rejection ratio are enhanced to 1.03×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> A/W and 3.38×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> . Moreover, the noise equivalent power and detectivity are determined to be 4.8 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-11</sup> W and 4.52 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cmHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sup> W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . This cost-effective oxidation technique provides a simple approach to fabricate AlGaN/GaN MIS-UV-PD and its performances are also improved.