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Resistance dependence of detected signals of MOM diodes
28
Citations
13
References
1979
Year
Diode ResistanceElectrical EngineeringSemiconductor DeviceEngineeringResistorPhysicsRf SemiconductorElectronic EngineeringAntennaApplied PhysicsContact PressureTerahertz TechniqueMicroelectronicsOptoelectronicsResistance DependenceElectromagnetic CompatibilityDetection Characteristics
The detection characteristics of point-contact W-Ni diodes at 10 MHz, 9.5 GHz, and 28.3 THz are investigated as a function of diode resistance (contact pressure). The experimental results are compared with predictions from tunneling theory taking into account circuit parameters. Good agreement is obtained when the relaxation behavior of the metallic whisker antenna is considered at infrared wavelengths.
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