An accurate method to check chemical interfaces of epitaxial III-V compounds

Abstract

We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.