Low-current proton-bombarded (GaAl)As double-heterostructure lasers

Abstract

Low-current cw stripe double-heterostructure (DH) lasers have been realized using a shallow proton-bombardment technique; unlike usual proton DH lasers they involve a resistive p (GaAl)As confinement layer and a rather highly doped GaAs active region both to reduce spreading current and stripe injected carrier outdiffusion. Threshold currents are on the order of 50 mA for a 12-μm-wide by 200-μm-long cavity.