Properties of the Mo-CuInSe2 interface

Abstract

Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.