Input noise in the hysteretic rf SQUID: Theory and experiment

Abstract

The spectral density of the low-frequency open-circuit intrinsic input noise of the hysteretic rf-biased SQUID is calculated. The noise level, which affects the optimized power sensitivity of the SQUID, is found to be strongly model dependent and thus also constitutes an interesting probe of device physics. The results of the calculation are significantly different from previous predictions. A direct measurement of the total input noise of a typical rf-biased SQUID system is reported. The results, which are consistent our calculation, correspond to a system noise temperature of 3.1±0.4 mK at a frequency of 1 kHz. This value is consistent with the Manley-Rowe equations and with previous experimentally determined upper limits.