Publication | Closed Access
OPTICALLY TRIGGERABLE DOMAINS IN GaAs GUNN DIODES
17
Citations
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References
1969
Year
PhotonicsDomain NucleationEngineeringLaser SciencePhysicsSemiconductor LasersHigh-power Laser TechnologyApplied PhysicsLaser PhysicsLaser ApplicationsSingle DomainLaser MaterialOptoelectronicsHigh-power LasersEpitaxial Gunn DiodeElectro-optics Device
Illumination of an epitaxial Gunn diode in the anode and central active region with the 1-nsec light pulse from a mode-locked He–Ne laser has been observed to trigger a single domain when the diode is biased just below threshold. Cathode illumination of a diode biased above threshold has been observed to inhibit domain nucleation.
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