Effects of Oxygen Concentration on Growth of Bi₄Ti₃O₁₂ Thin Films by Metalorganic Chemical Vapor Deposition

Abstract

The effects of oxygen concentration on the growth of Bi 4 Ti 3 O 12 thin films by metalorganic chemical vapor deposition (MOCVD) were investigated, using Bi(C 6 H 5 ) 3 and Ti( i -OC 3 H 7 ) 4 precursors, c -axis-oriented Bi 4 Ti 3 O 12 thin films were obtained at an oxygen gas flow rate of 200 sccm and a substrate temperature of 600° C on Pt(111)/ SiO 2 /Si(100) substrates without Bi 2 Ti 2 O 7 buffer layers. This film shows remanent polarization of 1.3 µ C/cm 2 , coercive field of 25 kV/cm, dielectric constant of 130 and leakage current density as low as 10 -8 –10 -7 A/cm 2 .