Publication | Closed Access

Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsElectrical Transport PropertiesApplied PhysicsAluminum Gallium NitrideGan Power DeviceWide Temperature RangeAu/sio2/n-gan Mis StructureCategoryiii-v Semiconductor