Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy

Abstract

Blue electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs(100) substrates by molecular beam epitaxy. The dopants used for n-and p-type ZnSe were Ga and O, respectively. The electron-beam-induced current strongly suggests the formation of a p-n junction. The built-in Potential of the p-n junction and carrier concentration of p-type ZnSe layer estimated from the capacitance-voltage relation were about 2.3 V and 1.2×10 16 cm -3 , respectively. The electroluminescence spectra from the p-n junction were dominated by band-edge emissions of 466 nm at room temperature and 446 nm at 77 K.