Publication | Closed Access
Anisotropic electron spin relaxation in bulk GaN
42
Citations
13
References
2009
Year
SpintronicsMagnetismElectron Spin LifetimeEngineeringPhysicsElectron Spin DynamicsApplied PhysicsMagnetic ResonanceCondensed Matter PhysicsQuantum MaterialsAluminum Gallium NitrideGan Power DeviceBulk GanSpintronic MaterialCategoryiii-v SemiconductorSpin Phenomenon
Electron spin dynamics in n-type c-oriented wurtzite GaN epilayers is studied by time-resolved Kerr-rotation measurements at T=80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is applied in the sample plane. This enhancement is explained by anisotropic Dyakonov–Perel spin relaxation in bulk GaN as a direct consequence of the anisotropy of spin-orbit coupling in semiconductors with wurtzite structure.
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