Direct evidence of the quasibound‐state lifetime effect in resonant tunneling from impedance measurements

Abstract

Abstract Small‐signal impedance measurements of GaAs/AlGaAs double‐barrier resonant tunneling heterostructures are analyzed in terms of equivalent circuits taking into account the quasibound‐state lifetime. The lifetime values extracted from experiments are in reasonable agreement with those deduced from calculation of quantum transmission probabilities. © 1992 John Wiley & Sons, Inc.