Applied Physics Letters · 1992 · 207 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsP-n JunctionsQuantum OptoelectronicsSemiconductor Crystal GrowthSemiconductor PhysicsCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCurrent InjectionDevice FabricationJunction FabricationMetalorganic Vapor Phase EpitaxyOptoelectronic PropertiesQuantum Optoelectronic Devices
The device is fabricated by ultrafine cylindrical growth via metalorganic vapor phase epitaxy. The study demonstrates that a p‑n junction can be formed in a ~100‑nm GaAs wire, confirmed by IV and CV measurements, and that it emits light at 77 K and room temperature, indicating the feasibility of ultrafine quantum‑size optoelectronic devices.
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum-size p-n junction are possible.
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H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations
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