Two types of structures for the GaAs(001)-c(4×4) surface

Abstract

Scanning tunneling microscopy, reflectance difference spectroscopy, and x-ray photoelectron spectroscopy have been used to study the atomic structures of the As-stabilized GaAs(001)-c(4×4) surface. We found that the c(4×4) surfaces are classified into two phases of α (Ga–As dimer structure) and β (As–As dimer structure). While the α phase is obtained by heating the β phase under As fluxes, we found that the structural change from β to α is kinetically-limited.