Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures

Abstract

The influence of external circuit parameters on the measured current-voltage behavior of double barrier resonant tunneling structures is studied both experimentally and through modeling. It is demonstrated that characteristic ‘‘plateaulike’’ structures, which often appear in the region of negative differential resistance, can be accounted for in terms of the oscillating nature of the circuit, given that only average currents and voltages are monitored.