A Simple Technique for the Accurate Determination of the Microwave Dielectric Constant for Microwave Integrated Circuit Substrates (Correspondence)

Abstract

A method of determining the microwave dielectric constant of microwave integrated circuit substrates is described. The technique is especially suitable to substrates being prepared for MICs since they are, in general, regular, rectangular, and, therefore, simple resonators. The dielectric constant using this technique has been determined in the 2- to 12-GHz range for GaAs (/spl epsiv/R = 12.46), sapphire (/spl epsiv/R =9.37), polyguide (/spl epsiv/ =2.33), and Alsimag 772 (/spl epsiv/R = 10.08).