Enhanced diffusion of antimony within a heavily phosphorus-doped layer

Abstract

Antimony diffusion within a heavily phosphorus-doped silicon layer has been studied. Enhanced diffusion of antimony has been found within a heavily phosphorus-doped layer, which contrasts with the retarded diffusion below such layers reported elsewhere. Antimony diffusivity increases in proportion to a certain power of electron concentration when carriers are given by phosphorus, and resembles the behavior of phosphorus diffusivity. These results indicate that the increase of charged vacancies due to Fermi-level effect within heavily phosphorus-doped layers coexists with vacancy undersaturation below the layer.