Heteroepitaxial β ‐ SiC on Si

Abstract

We grew a single crystalline beta silicon carbide layer at 1000°C on a Si off‐axial (111) substrate without using a buffer layer from a gas system of . The heterojunction between epitaxially doped n‐type and p‐type Si showed a diode ideality factor of 1.0–1.1, indicating that has a high potential for use as a wide gap emitter material.