Electron diffusion lengths in <i>p</i>-type InP involved in indium tin oxide/<i>p</i>-InP solar cells

Abstract

Electron diffusion length measurements have been performed in p-type InP by different methods: Surface photovoltage, spectrum analysis of the photocurrent in an Indium Tin Oxide/p-InP diode, variation of the photovoltage in this diode versus reverse voltage, Electron Beam Induced Current measurements. The results are compared and discussed in detail. A double p-type region model with different electron diffusion lengths has been proposed to explain the experimental results.